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RB161VA-20
Diodes
Schottky barrier diode
RB161VA-20
Applications General rectification Features 1) Small power mold type (TUMD2) 2) Low VF 3) High reliability External dimensions (Unit : mm)
0.170.1 0.05 1.30.05
Land size figure (Unit : mm)
1.1
1.90.1
2.50.2
TUMD2
Structure Silicon epitaxial planar
0.80.05
Structure
0.60.2
ROHM : TUMD2 0.1 dot (year week factory) + day
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.750.1 1.550.1 0 0.250.05
3.50.05
8.00.2
1.430.05
4.00.1
1.00.2 0
2.75
2.80.05
0.90.08
Absolute maximum ratings (Ta=25C) Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz1cyc) Junction temperature Storage temperature
Electrical characteristic (Ta=25C)
Symbol VRM VR Io IFSM Tj Tstg
Limits 30 20 1 5 125 -40 to +125
Unit V V A A
Parameter Forward voltage Reverse current
Symbol VF1 VF2 IR
Min. -
Typ. 0.33 0.38 0.2
Max. 0.37 0.42 1
Unit V A mA
Conditions IF=700mA IF=1A VR=20V
0.8 0.5
2.0
1/3
RB161VA-20
Diodes
Electrical characteristic curves
1000 Ta=75 100000 10000 1000 Ta=25 100 Ta=-25 10 1 0 5 10 15 20 25 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 30 Ta=125 1000 f=1MHz
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Ta=125 100
Ta=75
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
Ta=25 10 Ta=-25
10
1 0 100 200 300 400 500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
350
420
1000
FORWARD VOLTAGE:VF(mV)
FORWARD VOLTAGE:VF(mV)
340 330 320 310 AVE:332.9mV 300 VF DISPERSION MAP
REVERSE CURRENT:IR(uA)
Ta=25 IF=0.7A n=30pcs
410 400 390 380 AVE:386.8mV 370 VF DISPERSION MAP
Ta=25 VF=1A n=30pcs
900 800 700 600 500 400 300 200 100 0 AVE:205.9uA
Ta=25 VR=20V n=30pcs
IR DISPERSION MAP
200 180 170 160 150 140 130 120 110 100 Ct DISPERSION MAP AVE:160.3pF
20
30 Ifsm 1cyc 8.3ms
PEAK SURGE FORWARD CURRENT:IFSM(A)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=25 f=1MHz VR=0V n=10pcs
RESERVE RECOVERY TIME:trr(ns)
190
25 20 15 10 5 AVE:9.3ns 0
15
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
10
5 AVE:13.6A 0 IFSM DISRESION MAP
trr DISPERSION MAP
20
30
1000
Mounted on epoxy board
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
IM=10mA time
IF=0.2A
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 15 8.3ms 8.3ms 1cyc
25 20 15 10 5 0
Ifsm t
1ms
Rth(j-a)
300us
10
100
Rth(j-c)
5
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1
10 TIME:t(s) IFSM-t CHARACTERISTICS
100
10 0.001
0.01
0.1
1
10
100
1000
TIME:t(s) Rth-t CHARACTERISTICS
2/3
RB161VA-20
Diodes
1 0.8 DC D=1/2 2
3
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
2.5 2 1.5 1 0.5 Sin(180) 0 DC
REVERSE POWER DISSIPATION:PR (W)
FORWARD POWER DISSIPATION:Pf(W)
1.5 Sin(180) 1 DC 0.5 D=1/2
0A 0V
Io t T VR D=t/T VR=10V Tj=125
0.6 0.4 0.2 0 0
Sin(180)
D=1/2
0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30
0
25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
125
3
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
2.5 2 1.5 1 0.5 Sin(180) 0 0 25 50 DC
0A 0V
Io t T VR D=t/T VR=10V Tj=125
D=1/2
75
100
125
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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